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NB MEMORY 4GB DDR4 3200MHz PC4-25600 1RX16 SODIMM M471A5244CB0-CWE Samsung

NB MEMORY 4GB DDR4 3200MHz PC4-25600 1RX16 SODIMM M471A5244CB0-CWE Samsung
NB MEMORY 4GB DDR4 3200MHz PC4-25600 1RX16 SODIMM M471A5244CB0-CWE Samsung
  • Internal memory type: DDR4
  • Internal memory: 4
  • Memory layout (modules x size): 1 x 4
  • Internal memory: 4096
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    1,990ден.
    • Достапност: Има залиха
    • Шифра: 25002
    • Гарантен рок: 12 месеци
    • Рок на испорака: 24 часа
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    Technical Specifications

    • Name: NB MEMORY 4GB DDR4 3200MHz PC4-25600 1RX16 SODIMM M471A5244CB0-CWE Samsung 
    • Category Code: MEB
    • Internal memory type: DDR4
    • Internal memory: 4
    • Buffered memory type: Unregistered (unbuffered)
    • CAS latency: 19
    • Memory voltage: 1.2
    • Memory form factor: 260-pin SO-DIMM
    • Memory data transfer rate: 3200
    • Component for: Laptop
    • Memory layout (modules x size): 1 x 4
    • Memory bus: 64
    • Module configuration: 512M x 64
    • Row cycle time: 48.125
    • Refresh row cycle time: 260
    • Row active time: 35
    • Country of origin: Taiwan
    • Lead plating: Gold
    • Operating temperature (T-T): 0 - 85
    • Storage temperature (T-T): -55 - 100
    • Width: 67.6
    • Height: 30
    • Harmonized System (HS) code: 84733020
    • Chips organisation: x8
    • Bus clock rate: 1600
    • Internal memory: 4096
    • Memory layout: 1 x 4096
    • Units per Shipping Box: 1
    • Unit Calculated Volume: 4.275E-05
    • Unit Calculated Weight: 0.04